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Bulk aluminium nitride platform for gallium nitride high voltage and power

The Jena/Xing group have claimed the first measurements on aluminium nitride/gallium nitride quantum well field-effect transistors on bulk AlN substrates with re-grown ohmic contacts. A device with 65nm gate length achieved a record-high drain current of 2A/mm, it is claimed. The researchers see potential for future high-voltage and high-power microwave electronics. Read more