Biography
Kazuki Nomoto is a research associate in Cornell Electrical and Computer Engineering, specializing in the development and characterization of wide bandgap and ultra-wide bandgap semiconductor devices. His research focuses on the design, fabrication, and optimization of high electron mobility transistors (HEMTs) using advanced barrier materials such as AlScN, AlBN, and AlYN, as well as power devices based on gallium oxide (Ga₂O₃).
With over 20 years of experience in nano-fabrication and device physics, Dr. Nomoto’s work bridges fundamental material science and practical device engineering for high-frequency and high-power applications. He collaborates closely with leading research groups and startups, including Soctera Inc. and Gallox Semiconductors Inc., where he serves as a Senior Device Engineer.