A team of researchers from Cornell Engineering and Johns Hopkins University has received an NSF award for $1.7 million to create devices that efficiently allow light and electron waves to move forward in one direction, but stops it from moving in reverse.Read more
I got my Bachelor Degree in Physics from Peking University. After that, I pursued a Master Degree in Material Science and Engineering at Lehigh University. Wanting to work with devices that use wonderful material properties, I went to the University of California at Santa Barbara for my Ph.D. and eventually had my degree in Electrical Engineering. From 2004 to 2014 I was a faculty at the University of Notre Dame. I moved to Cornell in 2015.
The topics I work on now can be loosely categorized into 4 areas, supported by DoD, NSF, SRC and Doe.1). GaN based devices. The current projects include GaN power diodes and transistors, AlN/GaN ultrascaled high electron mobility transistors for high-speed high power applications, polarization doping for p-type in UV optoelectronic devices, negative differential resistance and plasma based THz sources for biomedical imaging and spectroscopy, wafer fused enabled hybrid structures. 2). nanowire enabled devices, including InGaN nanowires for high efficiency green emission and solar cells, II-VI nanowires for polarization sensitive wide spectrum photodetection etc. 3) 2D crystal materials and devices. We investigate van der Waals epitaxy, carrier electrostatics and transport, optoelectronic responses, p-n junctions and heterostructures, field modulation and tunneling, metamaterials and THz applications, graphene physics and devices. We investigate graphene based metamaterials for THz applications, lateral bandgap engineering in graphene, carrier electrostatics and transport, and optoelectronic responses, p-n junctions, field modulation and tunneling phenomena. 4) steep slope transistors for high-efficiency logic and RF electronics, especially tunnel FETs. We pioneered design, fabrication and characterization of III-V TFETs. Our current focus is 2D-crystal based steep slope transistors: the Thin-TFETs, tunneling field effect transistors for high efficiency logic electronics.
- Hu, Z., K. Nomoto, B. Song, M. Zhu, M. Qi, M. Pan, X. Gao, V. Protasenko, D. Jena, H G Xing. 2015. "Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown." Applied Physics Letters 107 (24): 243501-243501.
- Zhu, M., B. Song, M. Qi, Z. Hu, K. Nomoto, X. Yan, Y. Cao, W. Johnson, E. Kohn, D. Jena, H G Xing. 2015. "1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon." IEEE Electron Device Letters 36 (4): 375-377.
- Jena, D., K. Banerjee, Huili Xing. 2014. "Intimate Contacts." Nature Materials.
- Sensale-Rodriguez, Berardi, Rusen Yan, Michelle Kelly, Tian Fang, Kristof Tahy, Wan Sik Hwang, Debdeep Jena, Lei Liu, Huili Xing. 2012."Broadband graphene THz modulators enabled by intraband transitions." Nature Communications; Featured by NSF at LiveScience 3(780).
- Simon, John, Vladimir Protasenko, Chuanxin Lian, Huili Xing, Debdeep Jena. 2010. "Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures." Science 327 (60).
Selected Awards and Honors
- Richard E. Lunquist Sesquicentennial Faculty Fellow (Cornell University) 2015
- Young Scientist Award (International Symposium on Compound Semiconductors (ISCS)) 2014
- Featured Notre Dame Faculty at UND-BYU football game 2012
- CARREER Award (National Science Foundation) 2009
- Young Investigator Program Award (Air Force Office of Scientific Research) 2008
University of California 2003
In the News
Jena/Xing group recently achieved 40% internal quantum efficiency (IQE) for DUV emission at 219 nanometer-wavelength from gallium nitride/alumnimum nitride (GaN/AIN) heterostructures.Read more
Members of the Xing/Jena lab have reported on work on vertical junction barrier Schottky diodes (JBSDs) produced on free-standing gallium nitride (GaN).Read more