EDS Seminar: Srabanti Chowdhury: Energy density and newer functionalities in electronics

Location

Phillips Hall 233

Description

Cornell Electron Devices Society (EDS) presents:

Srabanti Chowdhury
Stanford University

Energy density and newer functionalities in electronics
through Wide bandgap materials and devices

Abstract
We live in a very exciting time, often identified as the age of the fourth industrial revolution. With electrification at every level, we are witnessing the most significant transformation of transportation since the internal combustion engine. The footprint of a highly connected world with 5G/6G is evident from the design and architecture of the latest generations of smart devices, including appliances, equipment, and machinery, supported by the IoT. Energy efficiency is the key to such advancement and requires research into materials beyond Silicon. Wide-bandgap (WBG) semiconductors present a pathway to enable much of these electronics with higher efficiency and newer functionalities, complementing Si. Semiconductor devices with higher power density have unprecedented value in both power and high-frequency electronics. Reducing energy losses is not only critical for minimizing consumption of limited resources, but it also simultaneously enables compact and lightweight solutions — the basis for a new industry offering increased performance at reduced system cost. The success of silicon carbide and gallium nitride have set the precedent for other ultra-wide bandgap materials (e.g., Diamond, Aluminum Nitride, and Gallium Oxide), presenting new area of research covering a wide spectrum from materials, physics, devices, and applications. In this talk, I will focus on our research on GaN and diamond-based devices and walk you through some of our recent findings leading to increasing the energy density and thermal management.

Bio
Prof. Srabanti Chowdhury of Electrical Engineering is the Willard and Inez Kerr Bell Faculty Scholar of School of Engineering at Stanford University. Her research focuses on wideband gap (WBG) and ultra-wide bandgap (UWBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. She leads the WBG-lab @ Stanford and serves as the Science Collaboration Director of the Energy Frontier Research Center (EFRC), ULTRA, supported by the US Department of Energy. She received her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. She has received various early career awards, including the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She received the Alfred P. Sloan fellowship in Physics in 2020. She is a senior fellow at the Precourt Institute of Energy at Stanford.